Low

UCC28880D - 

AC/DC Converter IC, Buck, Buck-Boost, Flyback, Primary-Side Regulation, 30 VAC - 700 VAC, SOIC-7

TEXAS INSTRUMENTS UCC28880D

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
UCC28880D
Order Code:
2450175
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
-40°C
:
700V
:
125°C
:
7Pins
:
30V
:
-
:
Buck, Buck-Boost, Flyback
:
SOIC
:
-
:
Cut Tape
:
MSL 2 - 1 year
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The UCC28880D is a High Voltage Switcher for non-isolated AC/DC conversion, integrates the controller and a 700V power MOSFET into one monolithic device. The device also integrates a high-voltage current source, enabling start up and operation directly from the rectified mains voltage. The low quiescent current of the device enables excellent efficiency. With the UCC28880D the most common converter topologies, such as buck, buck-boost and flyback can be built using a minimum number of external components. The UCC28880D incorporates a soft-start feature for controlled start up of the power stage which minimizes the stress on the power-stage components.
  • Integrated power MOSFET (switch) rated to 700V drain-to-source voltage
  • Integrated high-voltage current source for internal low-voltage supply generation
  • Soft-start
  • Self-biased switcher (start-up and operation directly from rectified mains voltage)
  • Supports buck, buck-boost and flyback topologies
  • <100µA Device quiescent current
  • Robust performance with inductor current runaway prevention
  • Current limit, overload, output short-circuit and over-temperature protection
  • Green product and no Sb/Br

Applications

Power Management, Metering, Consumer Electronics, Automation & Process Control, Signal Processing, LED Lighting

Warnings

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.