TPS43060RTET - 

DC/DC Controller, Current Mode, 4.5V to 38V, 1 Output, Synchronous Boost, 1MHz, WQFN-16


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Product Information

Synchronous Boost (Step Up)
1 Output
MSL 2 - 1 year
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Product Overview

The TPS43060RTET is a Low IQ Synchronous Boost Controller with wide input voltage and 7.5V gate drive for standard FETs. Synchronous rectification enables high-efficiency for high-current applications and lossless inductor DCR sensing further improves efficiency. The resulting low-power losses supports high power-density and high-reliability boost converter solutions over extended (-40°C to 150°C) temperature range. The TPS43060 includes a 7.5V gate drive supply, which is suitable to drive a broad range of MOSFETs. It has a 5.5V gate drive supply and driver strength optimized for low Qg NexFET power MOSFETs. Also, TPS43061 provides an integrated bootstrap diode for the high-side gate driver to reduce the external parts count. The PWM control circuitry turns on the low-side MOSFET at the beginning of each oscillator clock cycle, as the error amplifier compares the output voltage feedback signal at the FB pin to the internal 1.22V reference voltage.
  • 58V Maximum output voltage
  • 7.5V Gate drive optimized for standard threshold MOSFETs
  • Current-mode control with internal slope compensation
  • Adjustable frequency from 50kHz to 1MHz
  • Synchronization capability to external clock
  • Adjustable soft-start time
  • Inductor DCR or resistor current sensing
  • Output voltage power-good indicator
  • ±0.8% Feedback reference voltage
  • 5µA Shutdown supply current
  • 600µA Operating quiescent current
  • Cycle-by-cycle current limit and thermal shutdown
  • Adjustable under-voltage lockout (UVLO) and output overvoltage protection
  • Green product and no Sb/Br


Computers & Computer Peripherals, Automotive, Power Management, RF Communications, Portable Devices


This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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