Low

LMK61PD0A2-SIAT - 

Oscillator & Pulse Generator IC, Ultra Low Jitter, 80 MHz, 3.135 V to 3.465 V, QFM-8

TEXAS INSTRUMENTS LMK61PD0A2-SIAT

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Manufacturer Part No:
LMK61PD0A2-SIAT
Order Code:
2526584
Product Range
PLLatinum oscillator
Technical Datasheet:
(EN)
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Product Information

:
-40°C
:
QFM
:
85°C
:
8Pins
:
312.5MHz
:
PLLatinum oscillator
:
3.135V
:
Cut Tape
:
3.465V
:
MSL 3 - 168 hours
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Product Overview

The LMK61PD0A2-SIAT is an ultra low jitter pin selectable oscillator in 8 pin QFM package. The LMK61PD0A2 is an ultra low jitter platinum pin selectable oscillator that generates commonly used reference clocks. The device is pre-programmed in factory to support seven unique reference clock frequencies that can be selected by pin-strapping each of FS[1:0] to VDD, GND or NC (no connect). Output format is selected between LVPECL, LVDS or HCSL by pin-strapping OS to VDD, GND or NC. Internal power conditioning provide excellent power supply ripple rejection (PSRR), reducing the cost and complexity of the power delivery network. The device operates from a single 3.3V ±5% supply. It is used as high performance replacement for crystal, SAW or silicon-based oscillators and also used in switches, routers, network line cards, base band units (BBU), servers, storage/SAN, medical imaging and FPGA, processor attach.
  • 90fs RMS jitter at Fout < 100MHz
  • PSRR is -70dBc and robust supply noise immunity
  • Total frequency tolerance of ±50ppm
  • Industrial temperature range from -40°C to +85°C
  • ESD protection of ±4KV human body model (HBM) and ±1.5KV charged device model (CDM)
  • User selectable o/p frequency of 62.5MHz, 100MHz, 106.25MHz, 125MHz, 156.25MHz, 212.5MHz & 312.5MHz
  • Internal memory stores multiple start-up configurations, selectable through pin control

Applications

Clock & Timing, Test & Measurement, Communications & Networking

Warnings

This device has limited built-in ESD protection. The leads should be shorted together or place the device in conductive foam during storage or handling to prevent electrostatic damage to MOS gates.

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