Low

LM3671MF-3.3/NOPB - 

Buck (Step Down) Switching Regulator, Fixed, 2.7V-5.5V In, 3.3V And 0.6A Out, 2 MHz, SOT-23-5

TEXAS INSTRUMENTS LM3671MF-3.3/NOPB

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
LM3671MF-3.3/NOPB
Order Code:
1685767
Product Range
LM3671
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
5.5V
:
600mA
:
85°C
:
5Pins
:
2.7V
:
LM3671
:
Buck (Step Down)
:
-
:
SOT-23
:
2MHz
:
Cut Tape
:
3.3V
:
MSL 1 - Unlimited
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Product Overview

The LM3671MF-3.3/NOPB is a fixed output step down DC to DC converter in 5 pin SOT-23 package. This DC to DC converter is optimized for powering low voltage circuits from a single Li-Ion cell battery and input voltage rails from 2.7V to 5.5V. The LM3671 offers superior features and performance for mobile phones and similar portable systems. Automatic intelligent switching between PWM low noise and PFM low current mode offers improved system control. Hysteretic PFM mode extends battery life by reducing the quiescent current to 16µA (typical) during light load and standby operation. Internal synchronous rectification provides high efficiency during PWM mode operation. In shut down mode the device turns off and reduces battery consumption to typically 0.01µA.
  • Fixed output voltage is 3.3V
  • 600mA maximum load capability
  • 2MHz typical PWM fixed switching frequency
  • Automatic PFM/PWM mode switching
  • Internal synchronous rectification for high efficiency
  • 0.01µA typical shutdown current
  • Only three tiny surface mount external components required (one inductor, two ceramic capacitors)
  • Current overload and thermal shutdown protection
  • Operating temperature range -30°C to 85°C
  • Internal soft start

Applications

Power Management, Consumer Electronics, Portable Devices, Communications & Networking, Wireless

Warnings

This device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to MOS gates.

Associated Products