BQ24650RVAT - 

Battery Charger for 4 Cells of Lead Acid, LiFePO4, Li-Ion,Li-Pol battery, 28Vin, 10A charge, VQFN-16


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Product Information

Lead Acid, LiFePO4, Li-Ion, Li-Pol
Tape & Reel
MSL 2 - 1 year
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Product Overview

The BQ24650RVAT is a synchronous switch-mode integrated Battery-charge Controller for solar power with maximum power point tracking provides input voltage regulation, which reduces charge current when input voltage falls below a programmed level. When the input is powered by a solar panel, the input regulation loop lowers the charge current so that the solar panel can provide maximum power output. The BQ24650 offers a constant-frequency synchronous PWM controller with high accuracy current and voltage regulation. The charge controller charges the battery in three phases such as pre-conditioning, constant current and constant voltage. Charge is terminated when the current reaches 1/10 of the fast charge rate. The pre-charge timer is fixed at 30 minutes. The charge controller automatically restarts the charge cycle if the battery voltage falls below an internal threshold and enters a low quiescent current sleep mode when the input voltage falls below the battery voltage.
  • Maximum Power Point Tracking (MPPT) capability by input voltage regulation
  • Programmable MPPT setting
  • Resistor programmable float voltage
  • ±0.5% Charge-voltage regulation
  • ±3% Charge-current regulation
  • ±0.6% Input voltage regulation
  • Internal loop compensation
  • Internal digital soft start
  • Input over-voltage protection
  • Battery temperature sensing
  • Battery absent detection
  • Thermal shutdown
  • Charge status outputs for led or host processor
  • Charge enable on MPPSET pin
  • Automatic sleep mode for low power consumption
  • <15µA Off-state battery discharge current
  • Green product and no Sb/Br


Power Management, Automotive


This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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