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STMICROELECTRONICS  VNP35N07-E  MOSFET Transistor, N Channel, 18 A, 80 V, 28 mohm, 10 V, 3 V

STMICROELECTRONICS VNP35N07-E
Technical Data Sheet (460.23KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The VNP35N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
  • Automotive qualified
  • Linear current limitation
  • Thermal shutdown
  • Short-circuit protection
  • Integrated clamp
  • Low current drawn from input pin
  • Diagnostic feedback through input pin
  • ESD protection
  • Direct access to the gate of the power MOSFET (analogue driving)
  • Compatible with standard power MOSFET
ESD sensitive device, take proper precaution while handling the device.

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
18A
Drain Source Voltage Vds:
80V
On Resistance Rds(on):
0.028ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
125W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00195

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