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STMICROELECTRONICS  STB6N65M2  Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

STMICROELECTRONICS STB6N65M2
Technical Data Sheet (881.51KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
4A
Drain Source Voltage Vds:
650V
On Resistance Rds(on):
1.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
60W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00033

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