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STMICROELECTRONICS  STB11NM80T4  Power MOSFET, N Channel, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V

STMICROELECTRONICS STB11NM80T4
Technical Data Sheet (904.76KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The STB11NM80T4 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
  • Low gate input resistance
  • Best RDS (ON) Qg in the industry

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
5.5A
Drain Source Voltage Vds:
800V
On Resistance Rds(on):
0.35ohm
Rds(on) Test Voltage Vgs:
4V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001594