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ON SEMICONDUCTOR  P2N2222AG  Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 625 mW, 600 mA, 300 hFE

ON SEMICONDUCTOR P2N2222AG
Technical Data Sheet (119.67KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The P2N2222AG is a NPN Silicon Bipolar Transistor, designed for use in linear and switching applications.
  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Epoxy, Molded Case
  • Lead and Mounting Surface Temperature for Soldering Purposes of 260 C Max. for 10 Seconds
  • Notch in Plastic Body Indicates Cathode Lead Polarity

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
625mW
DC Collector Current:
600mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Signal Processing;
  • Industrial
 
Related Categories

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.003629

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