ON SEMICONDUCTOR  P2N2222AG  Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 625 mW, 600 mA, 300

ON SEMICONDUCTOR P2N2222AG

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Product Overview


The P2N2222AG is a NPN Silicon Bipolar Transistor, designed for use in linear and switching applications.
  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Epoxy, Molded Case
  • Lead and Mounting Surface Temperature for Soldering Purposes of 260 C Max. for 10 Seconds
  • Notch in Plastic Body Indicates Cathode Lead Polarity

Applications

Signal Processing; Industrial
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Product Information


  • Transistor Polarity NPN
  • Collector Emitter Voltage V(br)ceo 40V
  • Transition Frequency ft 300MHz
  • Power Dissipation Pd 625mW
  • DC Collector Current 600mA
  • DC Current Gain hFE 300
  • Transistor Case Style TO-92
  • No. of Pins 3Pins
  • Operating Temperature Max 150°C
  • MSL MSL 1 - Unlimited
  • SVHC No SVHC (17-Dec-2015)

Availability

Availability: No Longer Manufactured


Alternatives

  • 2453969 - Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 625 mW, 600 mA, 35
  • 9207120 - Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 1.2 W, 800 mA, 30
 
 
Low

Legislation and Environmental


  • Moisture Sensitivity Level: MSL 1 - Unlimited
  • Country of Origin: China

    Country in which last significant manufacturing process was carried out

  • RoHS Compliant: Yes
      RoHS Certificate of Compliance
  • Tariff No: 85412100
  • Weight (kg): .003629
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