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ON SEMICONDUCTOR  NTR4101PT1G  MOSFET Transistor, P Channel, -3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV

ON SEMICONDUCTOR NTR4101PT1G
Technical Data Sheet (109.39KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications.
  • Leading -20V Trench for low RDS (ON)
  • -1.8V Rated for low voltage gate drive
  • Surface-mount for small footprint
  • Halogen-free
  • -55 to 150°C Operating junction temperature range

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-3.2A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.07ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-720mV
Power Dissipation Pd:
1.25W
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Computers & Computer Peripherals;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033

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