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BC337G..
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 800 mA, 625 mW, TO-92, Through Hole
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC337G..
Order Code2101808
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max45V
Continuous Collector Current800mA
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency210MHz
DC Current Gain hFE Min630hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for BC337G..
1 Product Found
Product Overview
The BC337G is a NPN silicon bipolar Amplifier Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for medium power applications.
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
800mA
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
630hFE
Product Range
-
Collector Emitter Voltage Max
45V
Power Dissipation
625mW
Transistor Mounting
Through Hole
Transition Frequency
210MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000227