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ON SEMICONDUCTOR  1N5819G  Schottky Rectifier, General Purpose, Single, 40 V, 1 A, DO-204AL, 2 Pins, 600 mV

ON SEMICONDUCTOR 1N5819G
Technical Data Sheet (75.52KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 1N5819G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifier in low-voltage, high-frequency inverter and freewheeling diodes.
  • Cathode indicated by polarity band
  • Extremely low forward voltage
  • Low stored charge and majority carrier conduction
  • Low power loss and high efficiency
  • 48V Non-repetitive peak reverse voltage
  • 28V RMS reverse voltage
  • 80°C/W Junction-to-ambient thermal resistance
ESD sensitive device, take proper precaution while handling the device.

 

Product Information

Diode Configuration:
Single
Repetitive Reverse Voltage Vrrm Max:
40V
Forward Current If(AV):
1A
Diode Case Style:
DO-204AL
No. of Pins:
2Pins
Forward Voltage VF Max:
600mV
Forward Surge Current Ifsm Max:
25A
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
1N5819 Series
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Safety

Legislation and Environmental

Country of Origin:
Thailand

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85411000
Weight (kg):
.000352

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