Low

NXP  PMN35EN  MOSFET Transistor, N Channel, 5.1 A, 30 V, 0.025 ohm, 10 V, 1.5 V

NXP PMN35EN
Technical Data Sheet (813.01KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMN35EN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.
  • Logic-level compatible
  • Very fast switching
  • -55 to 150°C Junction temperature range

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
5.1A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.025ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
500mW
Transistor Case Style:
SOT-457
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Automation & Process Control;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000011

Alternatives

N CHANNEL MOSFET, 30V, 5A

VISHAY

Awaiting Delivery (Available for backorder to lead times shown)

Price for: Each (Supplied on Cut Tape)

3000+ £0.529

Buy

Associated Products