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NXP  PHPT61003PY  Bipolar (BJT) Single Transistor, PNP, -100 V, 125 MHz, 25 W, -3 A, 10 hFE

NXP PHPT61003PY
Technical Data Sheet (289.18KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PHPT61003PY is a 3A PNP High Power Bipolar Transistor in a surface-mount power plastic single-ended package. It is suitable for use in high temperature applications up to 175°C.
  • High thermal power dissipation capability
  • Reduced printed-circuit board (PCB) requirements comparing to transistors in DPAK
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified
  • NPN complement is PHPT61003NY
  • 1003PAB Marking code

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-100V
Transition Frequency ft:
125MHz
Power Dissipation Pd:
25W
DC Collector Current:
-3A
DC Current Gain hFE:
10hFE
Transistor Case Style:
SOT-669
No. of Pins:
5Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Automotive;
  • Power Management;
  • Lighting

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000202

Alternatives

TRANSISTOR, PNP, -100V, -3A, SOT-669-5

NXP

1,400:  in stock

Price for: Each (Supplied on Cut Tape)

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