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NXP  NX3008CBKV  Dual MOSFET, N and P Channel, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV

NXP NX3008CBKV
Technical Data Sheet (1.44MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NX3008CBKV is a N/P-channel complementary enhancement-mode MOSFET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for level shifter, power supply converter, load switch and switching circuit applications.
  • Very fast switching characteristics
  • Low threshold voltage

 

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
400mA
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
1ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
900mV
Power Dissipation Pd:
330mW
Transistor Case Style:
SOT-666
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85411000
Weight (kg):
.000003

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