Low

NXP  NX2301P  MOSFET Transistor, P Channel, -2 A, -20 V, 0.1 ohm, -4.5 V, -750 mV

NXP NX2301P
Technical Data Sheet (342.92KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
  • 1.8V RDSon rated for Low Voltage Gate Drive
  • Very Fast Switching
  • AEC-Q101 Qualified

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-2A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.1ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-750mV
Power Dissipation Pd:
400mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Audio;
  • Signal Processing;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000007