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NXP  BSP250,115  MOSFET Transistor, P Channel, -1 A, -30 V, 250 mohm, -10 V, -2.8 V

NXP BSP250,115
Technical Data Sheet (93.70KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSP250,115 is a -30V P-channel Enhancement Mode vertical D-MOS Transistor with high speed switching and low on resistance makes this device suitable for use in low loss motor, actuator drivers and power switching applications.
  • 150°C Junction temperature

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-1A
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.25ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-2.8V
Power Dissipation Pd:
5W
Transistor Case Style:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001588