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MULTICOMP  MJ11032  Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 300 W, 50 A, 1000 hFE

MULTICOMP MJ11032
Technical Data Sheet (244.94KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MJ11032 is a 120V Silicon NPN Complementary Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications.
  • High DC current gain
  • Monolithic construction with built-in base-emitter shunt resistors
  • High gain Darlington performance

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
120V
Transition Frequency ft:
-
Power Dissipation Pd:
300W
DC Collector Current:
50A
DC Current Gain hFE:
1000hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Taiwan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.0115

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