Bipolar (BJT) Single Transistor, PNP, -175 V, 200 MHz, 5 W, 1 A, 50 hFE
Image is for illustrative purposes only. Please refer to product description.
- -175V Collector to base voltage (VCBO)
- -5V Emitter to base voltage (VEBO
- 60ns Fall time (VCC = 30V, IB2 = 15mA)
- 175°C/W Thermal resistance, junction to ambient
- 35°C/W Thermal resistance, junction to case