Low

LTC4446EMS8E#PBF - 

MOSFET Driver, High Side And Low Side, 7.2V-13.5V Supply, 2.5A Out, 22ns Delay, MSOP-8

LINEAR TECHNOLOGY LTC4446EMS8E#PBF

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
LTC4446EMS8E#PBF
Order Code:
1715080
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
22ns
:
-40°C
:
2.5A
:
25ns
:
MSOP
:
85°C
:
8Pins
:
-
:
-
:
7.2V
:
Each
:
13.5V
:
High Side and Low Side
:
MSL 1 - Unlimited
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Product Overview

The LTC4446EMS8E#PBF is a high voltage high side/low side MOSFET Driver that drives two N-channel MOSFETs in a DC/DC converter with supply voltages up to 100V. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitance. The LTC4446's pull-up for the top gate driver has a peak output current of 2.5A and its pull-down has an output impedance of 1.2R. The pull-up for the bottom gate driver has a peak output current of 3A and the pull-down has an output impedance of 0.55R. The LTC4446 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground. The LTC4446 contains under-voltage lockout circuits that disable the external MOSFETs when activated. It does not have adaptive shoot-through protection.
  • Bootstrap supply voltage up to 114V
  • 2.5A Peak top gate pull-up current
  • 3A Peak bottom gate pull-up current
  • 1.2R Top gate driver pull-down
  • 0.55R Bottom gate driver pull-down
  • 5ns Top gate fall time driving 1nF load
  • 8ns Top gate rise time driving 1nF load
  • 3ns Bottom gate fall time driving 1nF load
  • 6ns Bottom gate rise time driving 1nF load
  • Drives both high and low side N-channel MOSFETs
  • Under-voltage lockout

Applications

Power Management, Automotive, Communications & Networking

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