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2010/02/09
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Please refer to product description
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- Manufacturer:
-
NXP
- Order Code:
- 8734747RL
- Manufacturer Part No:
- BC847BV
RoHS
:
Yes
- Description
- TRANSISTOR, NPN, SOT-666
- Module Configuration:Dual
- Collector-to-Emitter Breakdown Voltage:45V
- Typ Gain Bandwidth ft:100MHz
- Power Dissipation Pd:200mW
- DC Collector Current:100mA
- DC Current Gain hFE:200
- Operating Temperature Range:-65°C to +150°C
- No. of Pins:6
- SVHC:No SVHC
- Case Style:SOT-666
- Termination Type:SMD
- Transistor Polarity:NPN
- Transistor Type:Bipolar
- Current Ic hFE:2mA
- Full Power Rating Temperature:25°C
- Max Current Ic:100A
- Max Current Ic Continuous a:100A
- Max Power Dissipation Ptot:300mW
- Max Power Dissipation per device:200mW
- Max Voltage Vce Sat:200mV
- Min Hfe:200
- Power Dissipation:250mW
- SMD Marking:1F
- Voltage Vcbo:50V
|
Availability
Availability:
5745
Price For:
1 Each
Minimum Order Quantity:
5
Order Multiple:
5
Unit Price:
£0.40
Price
| Qty |
List Price
|
|
5 - 99
|
£0.40
|
|
100 - 999
|
£0.20
|
|
1000 - 3999
|
£0.153
|
|
4000+
|
£0.101
|
|
| Technical Specifications |
Product Attributes |
Similar Products |
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Product Range
Catalogue Page:
601 / UK1
|
Weight (kg):
0.000003
Tariff No.:
85412100
Country of Origin:
HK
Hong Kong
Country in which last significant manufacturing process was carried out
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