Print Page
IRFU9024NPBF
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFU9024NPBF
Order Code8650101
Also Known AsSP001557756
Technical Datasheet
Available to Order
Notify me when back in stock
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £0.527 |
| 10+ | £0.522 |
| 100+ | £0.388 |
| 500+ | £0.332 |
| 1000+ | £0.274 |
| 5000+ | £0.261 |
Price for:Each
Minimum: 1
Multiple: 1
£0.53 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFU9024NPBF
Order Code8650101
Also Known AsSP001557756
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id11A
Drain Source On State Resistance0.175ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
Product Overview
The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
- Ultra low on-resistance
- Advanced process technology
- Fully avalanche rated
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.175ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454
Product traceability