Low

IPW65R190C7XKSA1 - 

Power MOSFET, N Channel, 24 A, 650 V, 0.404 ohm, 10 V, 3.5 V

INFINEON IPW65R190C7XKSA1

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IPW65R190C7XKSA1
Order Code:
2420511
Also Known As:
IPW65R190C7 , SP001080142
Technical Datasheet:
(EN)
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Product Information

:
72W
:
150°C
:
24A
:
N Channel
:
3Pins
:
3.5V
:
-
:
650V
:
10V
:
TO-247
:
0.404ohm
:
-
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Product Overview

The IPW65R190C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
  • Revolutionary best-in-class RDS (ON)
  • Reduced energy stored in output capacitance (EOSS)
  • Space saving through use of smaller packages or reduction of parts
  • Improved safety margin and suitable for both SMPS and Solar Inverter applications
  • Lowest conduction losses
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Applications

Industrial, Power Management, Alternative Energy, Communications & Networking

Footnotes

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.

Also Known As

IPW65R190C7 , SP001080142