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INFINEON  IPB180N04S400ATMA1  MOSFET Transistor, N Channel, 180 A, 40 V, 0.0008 ohm, 10 V, 3 V

INFINEON IPB180N04S400ATMA1
Technical Data Sheet (162.18KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPB180N04S4-00 is a N-channel enhancement-mode MOSFET with lowest switching and conduction power losses for high thermal efficiency.
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • Green device
  • Ultra low RDS (ON)
  • 100% Avalanche tested
  • Highest current capability
  • Robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
180A
Drain Source Voltage Vds:
40V
On Resistance Rds(on):
800µohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
300W
Transistor Case Style:
TO-263
No. of Pins:
7Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • HVAC;
  • Automotive

Also Known As

IPB180N04S4-00 , SP000646176

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00143