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INFINEON  IPB144N12N3GATMA1  MOSFET Transistor, N Channel, 41 A, 120 V, 0.0123 ohm, 10 V, 3 V

INFINEON IPB144N12N3GATMA1
Technical Data Sheet (771.57KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPB144N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
  • Excellent switching performance
  • World's lowest RDS (ON)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS (ON) product (FOM)
  • MSL1 rated 2
  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products
  • Qualified according to JEDE for target applications
  • Halogen-free, Green device
  • Ideal for high-frequency switching and synchronous rectification
  • Normal level

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
41A
Drain Source Voltage Vds:
120V
On Resistance Rds(on):
0.0123ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
107W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Computers & Computer Peripherals;
  • Portable Devices;
  • LED Lighting

Also Known As

IPB144N12N3 G , SP000694166

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00143