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INFINEON  IPB120P04P4L03ATMA1  MOSFET Transistor, P Channel, -120 A, -40 V, 0.0026 ohm, -10 V, -1.7 V

INFINEON IPB120P04P4L03ATMA1
Technical Data Sheet (248.78KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPB120P04P4L-03 is a P-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.
  • Logic level
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • Green device
  • 100% Avalanche tested
  • Simple interface drive circuit
  • World's lowest RDS (ON) at 40V
  • Highest current capability
  • Lowest switching and conduction power losses for highest thermal efficiency
  • Robust packages with superior quality and reliability

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-120A
Drain Source Voltage Vds:
-40V
On Resistance Rds(on):
0.0026ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1.7V
Power Dissipation Pd:
136W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Automotive

Also Known As

IPB120P04P4L-03 , SP000842284

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00143