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INFINEON  IPB107N20NAATMA1  MOSFET Transistor, N Channel, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V

INFINEON IPB107N20NAATMA1
Technical Data Sheet (689.11KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPB107N20NA is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
  • Lowest Qg and Qgd
  • World's lowest FOM, MSL 1 rated
  • Highest efficiency
  • Highest power density
  • Lowest board space consumption
  • Environmentally friendly
  • Easy-to-design-in products
  • Ideal for high-frequency switching and synchronous rectification
  • Qualified according to JEDEC for target application
  • Halogen-free, Green device
  • Qualified according to AEC-Q101

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
88A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.0096ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
300W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Audio;
  • LED Lighting;
  • Motor Drive & Control;
  • Power Management;
  • Automotive

Also Known As

IPB107N20NA , SP000877674

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00143