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INFINEON  IPB049NE7N3GATMA1  MOSFET Transistor, N Channel, 80 A, 75 V, 0.0044 ohm, 10 V, 3.1 V

INFINEON IPB049NE7N3GATMA1
Technical Data Sheet (530.58KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPB049NE7N3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.
  • Best switching performance
  • World's lowest RDS (ON)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS (ON) product (FOM)
  • MSL1 rated
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products
  • Ideal for high frequency switching and DC-to-DC converters
  • Normal level
  • 100% avalanche tested
  • Qualified according to JEDEC for target applications
  • Halogen-free, Green device

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
80A
Drain Source Voltage Vds:
75V
On Resistance Rds(on):
0.0044ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3.1V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Motor Drive & Control;
  • Audio;
  • Communications & Networking;
  • Automotive

Also Known As

IPB049NE7N3 G , SP000641752

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00143