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INFINEON  IPA60R190P6XKSA1  Power MOSFET, N Channel, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V

INFINEON IPA60R190P6XKSA1
Technical Data Sheet (3.02MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPA60R190P6 is a N-channel power MOSFET with 650VDS drain source voltage. Infineon's CoolMOS™ P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease of use.
  • Reduced gate charge (Qg)
  • Higher V th
  • Good body diode ruggedness
  • Optimized integrated Rg
  • Improved dV/dt from 50V/ns
  • CoolMOS™ quality with over 12 years manufacturing experience in Superjunction technology
  • Increased MOSFET dV/dt ruggedness
  • Extremely low losses due to very low FOM RDS (ON) x Qg and Eoss
  • Very high commutation ruggedness
  • Easy to use/drive
  • Improved efficiency especially in light load condition
  • Better efficiency in soft switching applications due to earlier turn-OFF

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
20.2A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.171ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
34W
Transistor Case Style:
TO-220FP
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Communications & Networking;
  • Industrial

Also Known As

IPA60R190P6 , SP001017080

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006