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FAIRCHILD SEMICONDUCTOR  NDS331N  MOSFET Transistor, N Channel, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV

FAIRCHILD SEMICONDUCTOR NDS331N
Technical Data Sheet (64.18KB) EN See all Technical Docs

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Product Overview

The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
  • High density cell design for extremely low RDS (ON)
  • Exceptional on-resistance and maximum DC current capability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1.3A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.11ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
500mW
Transistor Case Style:
SuperSOT
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Computers & Computer Peripherals

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Alternatives

MOSFET Transistor, N Channel, 6.3 A, 20 V, 21 mohm, 4.5 V, 0.9 V

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