Low

FAIRCHILD SEMICONDUCTOR  FQPF3N80C  Power MOSFET, N Channel, 3 A, 800 V, 4 ohm, 10 V, 5 V

FAIRCHILD SEMICONDUCTOR FQPF3N80C
Technical Data Sheet (869.20KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FQPF3N80C is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
  • Low gate charge (13nC)
  • Low Crss (5.5pF)
  • 100% avalanche tested

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
3A
Drain Source Voltage Vds:
800V
On Resistance Rds(on):
4ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5V
Power Dissipation Pd:
39W
Transistor Case Style:
TO-220F
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management;
  • Lighting

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002105

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