2014/07/29
 
 
 
Home > Manufacturers > NXP > PBHV8540X NPN high-voltage low VCEsat BISS transistor
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NXP

NXP PBHV8540X NPN high-voltage low VCEsat BISS transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.

  • High voltage
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • AEC-Q101 qualified
NXP PBHV8540X

Product Description

Coming from NXP is a NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor.
It is available as a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
The PNP complement is PBHV9040X.

Typical applications

LED driver for LED chain module, LCD backlighting, automotive motor management, hook switch for wired telecom, Switch Mode Power Supply (SMPS).

Physical characteristics

Plastic surface-mounted package; die pad for good heat transfer; three leads.

Electrical characteristics

High voltage, Low collector-emitter saturation voltage VCEsat, High collector current capability IC and ICM, High collector current gain hFE at high IC.

 
 
   

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